Atomic scale defect formation and phase transformation in Si implanted <i>β</i>-Ga2O3
نویسندگان
چکیده
Atomic scale details of the formation point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect Si implantation was as a function dose atoms, detailed mechanism lattice recovery observed both situ ex annealing β-Ga2O3. created nanoscale dark spots STEM images, which we identified local γ-Ga2O3 inclusions generated by relaxation due ⟨010⟩ screw dislocations implantation. number size regions increased increased, eventually crystal (with stacking defects) took over entire volume when peak concentration ∼1020 cm−3. Annealing above 1100 °C disintegrates returns structure defect-free, single β phase, likely indicating that (such interstitials cation vacancies) are spatially redistributed annealing. However, is completely transformed implantation, post-annealing leaves within relates inhomogeneous distribution atoms detected secondary ion mass spectrometry.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2023
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0134467