Atomic scale defect formation and phase transformation in Si implanted <i>β</i>-Ga2O3

Atomic scale details of the formation point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect Si implantation was as a function dose atoms, detailed mechanism lattice recovery observed both situ ex annealing β-Ga2O3. created nanoscale dark spots STEM images, which we identified local γ-Ga2O3 inclusions generated by relaxation due ⟨010⟩ screw dislocations implantation. number size regions increased increased, eventually crystal (with stacking defects) took over entire volume when peak concentration ∼1020 cm−3. Annealing above 1100 °C disintegrates returns structure defect-free, single β phase, likely indicating that (such interstitials cation vacancies) are spatially redistributed annealing. However, is completely transformed implantation, post-annealing leaves within relates inhomogeneous distribution atoms detected secondary ion mass spectrometry.